| International Journal of Advanced Applied Physics Research (Volume 3 Issue 1) |
| Zr-Content Dependence of Electrical Properties in Heat-Treated In2O3: Zr Thin Films Grown on a Sapphire Substrate by Sputtering |
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Pages 1-4
Yuichi Sato, Minoru Hatakeyama, Yuhei Muraki, Kazuki Sonoda, and Yoshifumi Murakami
DOI: http://dx.doi.org/10.15379/2408-977X.2016.03.01.01
Published: 15 June 2016 |
| Abstract |
| Zirconium-doped indium oxide (In2O3:Zr) thin films of various Zr-contens were hetero-epitaxially grown on a sapphire single-crystalline substrate by a magnetron sputtering method. The films were heat-treated in an N2 atmosphere and the variations of their electrical properties as a function of the Zr-content were investigated. We observed the resistivity decreasing without any deterioration in their crystallinity and optical transmission property after the heat-treatment when the impurity content was within 2 wt.%, and then, the degree of the resistivity-decrease saturated since their mobility started to decrease due to the heavy impurity doping. |
| Keywords |
| Sapphire, Multichannel spectroscopes, Nitride semiconductor, Photovoltaic cells, Van der Pauw. |
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