International Journal of Advanced Applied Physics Research

Volume 4 Issue 2

International Journal of Advanced Applied Physics Research

 Table of Contents

 December, 2017

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Modelling and Simulation of Self Heating in GaN Based High Electron Mobility Transistors (HEMTs)Pages 22-27
Nishchal Patni, A.D.D. Dwivedi, Deepak Kumar, Rahul Bothra, and Anjali Kumari
http://dx.doi.org/10.15379/2408-977X.2017.04.02.01

 

Theoretical and Experimental Studies of Thermodynamic Properties, Anharmonic Effects and Structural Determination of HCP CrystalsPages 28-34
Dinh Quoc Vuong and Nguyen Van Hung
http://dx.doi.org/10.15379/2408-977X.2017.04.02.02


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