International Journal of Advanced Applied Physics Research  (Volume 5 Issue 1)
Numerical Simulation of P3HT Based Organic Light Emitting Diode International Journal of Advanced Applied Physics Research
Pages 7-13

Shilpi Raj and A.D.D. Dwivedi

DOI: http://dx.doi.org/10.15379/2408-977X.2018.05.01.02

Published: 12 June 2018
Abstract

Recently, organic light emitting diodes (OLEDs) have become quite popular in the field of microelectronics like optoelectronics application, modulated light source and internet connection etc. Owing to the advantages of solid-state, self-emission, full color capability and flexibility, OLED has been recognized as one of the most promising flat panel display technology. This paper presents the results of single polymer layer OLED (ITO/P3HT/Ca) 1D and 2D-numerical simulation and analysis using Silvaco TCAD tools, which is a physically-based simulator. The physically-based simulation of the electrical and optical characteristics, such as luminescence power, current density versus electric field, current versus voltage and I-V characteristics for different thicknesses and doping concentration of emitting layer is presented. The distribution of Langevin recombination inside the structure is also presented and discussed for better understanding of physical processes and operation principal of OLED.

Keywords
Organic light emitting diode, Atlas, Silvaco TCAD, Simulation, P3HT.
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