Advance in the Analysis Models for Characterizing Multi-Layered Interdigital Capacitors

Authors

  • Kwong Wai Mak Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People's Republic of China
  • Jianhua Hao Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People's Republic of China

DOI:

https://doi.org/10.15379/2408-977X.2014.01.01.1

Keywords:

Device modeling, Interdigital capacitors, Conformal mapping, Ferroelectric devices

Abstract

The performances of multi-layered interdigital capacitors are commonly simulated by computer software. However, it is the time-consuming process. Besides simulations, the analytic models with closed form expressions provide convenient methods in particular usages, such as characterizing ferroelectric materials. This article briefly reviews the development in the expressions for analytic models. We provide an overview of partial capacitance technique and conformal mapping technique, which are used for formulating expressions. In addition, three common models used these techniques are presented. The differences of models and applications are also discussed.

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Published

2014-08-28

Issue

Vol. 1 No. 1 (2014)

Section

Articles

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