Doping GaN NPs Synthesized by a Chemical Method for p-n Junction Application

Authors

  • Motahher. A. Qaeed Department of Physical Science, Faculty of Science, University of Jeddah, Jeddah, Saudi Arabia
  • A. Mindil Department of Physical Science, Faculty of Science, University of Jeddah, Jeddah, Saudi Arabia
  • Alharthi A. Eid Department of Physical Science, Faculty of Science, University of Jeddah, Jeddah, Saudi Arabia

DOI:

https://doi.org/10.15379/ijmst.v10i3.3367

Keywords:

P-GaN; Hall Effect; p-n junction; Magnesium; FESEM; Ideality Factor and Series Resistance

Abstract

This research was devoted to studying the doping of GaN NPs at low temperature with Mg and the possibility of using them in the p-n junction. This study was subjected to a FESEM, EDX, XRD, PL and Hall Effect examination. The FESEM examination showed clear images of the NPs, the XRD peaks appear at 2? = 32.5, 39.1 and 45.48 which conform the crystalline of p-GaN NPs, Hole Effects measurements confirm the p-GaN with different Mg ratios. The ideality factor and series resistance of p-n junction have been measured.

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Published

2023-08-01

How to Cite

[1]
M. A. . Qaeed, A. . Mindil, and A. A. . Eid, “Doping GaN NPs Synthesized by a Chemical Method for p-n Junction Application”, ijmst, vol. 10, no. 3, pp. 3388-3396, Aug. 2023.

Issue

Vol. 10 No. 3 (2023): Continuous publication

Section

Articles

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