Ag Incorporated MoO3 Thin Films and Fabrication of Ag/MoO3/p-Si Structured Photodiode

Authors

  • G. Lavanya Research scholar, Department of Electronics, PSG College of Arts and Science, Coimbatore, Tamil Nadu, India
  • N. Sivanandan Assistant Professor, Department of Electronics, PSG College of Arts and Science, Coimbatore, Tamil Nadu, India

DOI:

https://doi.org/10.15379/ijmst.v10i2.2902

Keywords:

MoO3, orthorhombic structure, photodetector

Abstract

MoO3 have been widely investigated for their applications ranging from electronics to energy storage. Orthorhombic structured MoO3 thin films were prepared on a glass substrate. The Ag doped materials to add the MoO3 in different concentrations (1%, 3%, 5%) at Wt% with MoO3 precursor and synthesis was done using the spray pyrolysis method. X-ray diffraction revealed the incorporation of Ag in the MoO3 orthorhombic structure. FE-SEM images showed more dispersive and rod shapes than Agi-doped MoO3 and pure MoO3 respectively. The jet nebulizer spray pyrolysis technique for fabrication of n-Ag: MoO3/p-Si photodiodes makes it suitable for good response photo-detecting applications.

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Published

2023-07-26

How to Cite

[1]
G. . Lavanya and N. Sivanandan, “Ag Incorporated MoO3 Thin Films and Fabrication of Ag/MoO3/p-Si Structured Photodiode”, ijmst, vol. 10, no. 2, pp. 2508-2514, Jul. 2023.

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