Modelling and Simulation of Self Heating in GaN Based High Electron Mobility Transistors (HEMTs)

Authors

  • Nishchal Patni Department of Electrical and Electronics Engineering, Poornima University Jaipur, India
  • A.D.D. Dwivedi Department of Electrical and Electronics Engineering, Poornima University Jaipur, India
  • Deepak Kumar Department of Electrical and Electronics Engineering, Poornima University Jaipur, India
  • Rahul Bothra Department of Electrical and Electronics Engineering, Poornima University Jaipur, India
  • Anjali Kumari Anjali Kumari Department of Electrical and Electronics Engineering, Poornima University Jaipur, India

Keywords:

GaN, HEMTs, Self heating, Numerical simulation, Drift diffusion model

Abstract

In this paper we present the numerical simulation and characterization of GaN based high electron mobility transistors (HEMTs) using commercial device simulation software ATLAS from Silvaco international. Device has been characterized in terms of its electrical and thermal behavior by simulating its transfer and output characteristics without self-heating and with self-heating. Also we simulated the distribution of lattice temperature inside the device for thermal characterization of the device. For electrical characterization the fundamental equations responsible for charge transport of charge carriers have been solved using finite element method. For thermal characterization fundamental equations of charge transport and heat flow equations have been solved self consistently.

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Published

2017-12-27

Issue

Vol. 4 No. 2 (2017)

Section

Articles

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