PbZrO3-Based Antiferroelectric Thin Film Capacitors with High Energy Storage Density

Authors

  • Mao Ye College of Materials Science and Engineering and Shenzhen Key Laboratory of Special Functional Materials, Shenzhen University, Shenzhen 518060, China
  • Peng Lin College of Materials Science and Engineering and Shenzhen Key Laboratory of Special Functional Materials, Shenzhen University, Shenzhen 518060, China
  • Haitao Huang Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
  • Biaolin Peng College of Materials Science and Engineering and Shenzhen Key Laboratory of Special Functional Materials, Shenzhen University, Shenzhen 518060, China
  • Qiu Sun School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001, China
  • Fuping Wang School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001, China
  • Xiang Peng 2College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
  • Xierong Zeng College of Materials Science and Engineering and Shenzhen Key Laboratory of Special Functional Materials, Shenzhen University, Shenzhen 518060, China
  • Shanming Ke College of Materials Science and Engineering and Shenzhen Key Laboratory of Special Functional Materials, Shenzhen University, Shenzhen 518060, China

DOI:

https://doi.org/10.15379/2408-977X.2014.01.01.4

Keywords:

Sandwich structure, Antiferroelectric, Thin films, Sol-gel, High energy density.

Abstract

A series of 400-nm-thick sandwich structured Pb(1+x)ZrO3/(Pb,Eu)ZrO3/Pb(1+x)ZrO3(PZO/PEZO/PZO) antiferro-
electric thin films with different Pb excess content (x) (x=0%, 10%, 20%, and 30%) in the PZO precursors have been successfully deposited on Pt(111)/Ti/SiO2/Si substrates by a sol–gel method. The effects of Pb excess content on the dielectric properties, and energy storage performance of the PZO/PEZO/PZO thin films have been investigated in detail. It is found that all the films show a unique perovskite phase structure. With increasing Pb excess content in the PZO precursors, P-E hysteresis loop changes from slanted to square shape. Meanwhile, a larger antiferroelectric to ferroelectric switching field (EAF) and ferroelectric to antiferroelectric switching field (EFA) are observed in the films with higher Pb excess content. When increasing Pb excess content from 0% to 30%, the energy storage density of the sandwich structured films is remarkably improved from 11.4 to 14.8 J/cm3 at 1000 kV/cm.

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Published

2014-08-28

Issue

Vol. 1 No. 1 (2014)

Section

Articles

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