Effect of Stress Annealing on Domain Wall Dynamics in Nanocrystalline Hitperm-Type Microwires

Authors

  • A. Talaat Dpto. Fisica de Materiales, UPV/EHU, 20018, San Sebastian, Spain
  • P. Klein RVmagnetics, a. s., Hodkovce 21, 04421 Košice, Slovakia
  • R. Varga RVmagnetics, a. s., Hodkovce 21, 04421 Košice, Slovakia
  • V. Zhukova Dpto. Fisica de Materiales, UPV/EHU, 20018, San Sebastian, Spain
  • J.M. Blanco Dpto. de Física Aplicada, EUPDS, UPV/EHU, 20018, San Sebastian, Spain
  • M. Ipatov Dpto. Fisica de Materiales, UPV/EHU, 20018, San Sebastian, Spain
  • A. Zhukov Dpto. Fisica de Materiales, UPV/EHU, 20018, San Sebastian, Spain

DOI:

https://doi.org/10.15379/2408-977X.2016.03.01.03

Keywords:

Magnetic wires, Hitperm, Nanocrystalline materials, Domain wall dynamics, Longitudinal anisotropy, Compressive stresses

Abstract

We have studied the effect of stress induced anisotropy on domain wall dynamics in as-cast and annealed nanocrystalline Hitperm-type microwires. Annealing without stress leads to stress relaxation of the strong stresses frozen-in post the production process. Stress annealing at 300oC under 222.7 and 270.9 MPa, respectively, has triggered most complex domain wall dynamics.

Observed results are discussed considering that annealing under higher stresses leads to an enhancement of longitudinal (axial) anisotropy due to positive magnetostriction of both bcc-(Fe, Co) grain as well as the residual amorphous matrix, and subsequently due to the decreasing of axial anisotropy due to back stresses arising from the glass-coating after removing the mechanical load.

Magnetic anisotropies (axial and radial ones) after stress annealing can be responsible for the considerable influence of the annealing conditions on domain wall dynamics observed in Hitperm-type microwires. As a result of decreasing both anisotropies by different ways, the domain wall velocity decreased.

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Published

2016-07-26

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Vol. 3 No. 1 (2016)

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