High Quality InSb Microcrystal Hall Sensor Doped with Te or Bi

Authors

  • Inessa Bolshakova Test Magnetic Laboratory, Electrophysical Department, Lviv Polytechnical State University, Ukraine
  • F.S. Terra Physics department, National Research Center, Dokki, Cairo, Egypt
  • G.M. Mahmoud Physics department, National Research Center, Dokki, Cairo, Egypt
  • A.M. Mansour Physics department, National Research Center, Dokki, Cairo, Egypt

DOI:

https://doi.org/10.15379/2408-977X.2016.03.01.02

Keywords:

InSb, Hall magnetic sensor, Te, Bi, Sensitivity, Magnetoresistance, Chemical Transport Reaction (CTR)

Abstract

InSb microcrystal doped with Cr, Al or Sn, which were radiation-resistant and were applied as magnetic microsensors in Satellites. The magnetic field sensitivity, , as a function of temperature was determined for both Bi and Te doped InSb microcrystals. Tellurium doping of InSb microcrystals at 3 x10 17 cm-3 leads to increase of the magnetic field sensitivity, , to ? 1.1 V/AT, but it decreases to ? 0.45 V/AT at 450K. On the other hand doping with Bi at 1 x 1017 cm-3 gives ? 1 V/AT. The charge carriers mobility of the investigated microcrystals varies from about 2.11m2/V.s to 3.4 m2/V.s, for Te doped samples and from 3.2 m2/V.s to 4.3 m2/V.s for Bi doped samples at room temperature. The electrical resistivity variation with temperature was also studied.

References

Bolshakova IA, Moskovets T, Ostrovskii I, Ostrovskaya A and Klimenko A. Comp Mater Sci 1998; 10: 38. http://dx.doi.org/10.1016/S0927-0256(97)00184-5

Bolshakova IA. Evangelos Hristoforou, Sensors and Actuators A 2006; 129: 192. http://dx.doi.org/10.1016/j.sna.2005.11.042

Oszwaldowski M and Berus T. Sensors and Actuators A 2007; 136: 234. http://dx.doi.org/10.1016/j.sna.2006.11.023

Stradling R. Semicond Sci Technol 1991; 6: C52. http://dx.doi.org/10.1088/0268-1242/6/12C/011

Ishida S, Tekeda K, Okamato A and Shibasaki I. Physica E 2004; 20: 255. http://dx.doi.org/10.1016/j.physe.2003.08.013

Ashley T, Dean A, Elliott C, Pryce G, Johnson A and Willis H. Appl Phys Lett 1995; 66: 481. http://dx.doi.org/10.1063/1.114063

Raub E, Muller K. Fundamentals of Metal Deposition, Elsevier Publishing Co, New York (1967)

Terra F, Fahim G and Bolshakova IA. Russian Phys J 2003; 46(6): 601 http://dx.doi.org/10.1023/B:RUPJ.0000008186.46277.62

Goc J, Osz waldowski M, and Szweyer H. Thin Solid Films 1986; 142: 227. http://dx.doi.org/10.1016/0040-6090(86)90007-6

Bolshakova IA, et al. Comput Mater Sci 1997; 569: 1

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Published

2015-06-15

Issue

Vol. 3 No. 1 (2016)

Section

Articles

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