Zr-Content Dependence of Electrical Properties in Heat-Treated In2O3: Zr Thin Films Grown on a Sapphire Substrate by Sputtering

Authors

  • Yuich Sato Electrical and Electronic Engineering Course, Graduate School of Engineering Science, Akita University, Japan
  • Minoru Hatakeyama Electrical and Electronic Engineering Course, Graduate School of Engineering Science, Akita University, Japan
  • Yuhei Muraki Electrical and Electronic Engineering Course, Graduate School of Engineering Science, Akita University, Japan
  • Kazuki Sonoda Electrical and Electronic Engineering Course, Graduate School of Engineering Science, Akita University
  • Yoshifumi Murakami Electrical and Electronic Engineering Course, Graduate School of Engineering Science, Akita University, Japan

DOI:

https://doi.org/10.15379/2408-977X.2016.03.01.01

Keywords:

Sapphire, Multichannel spectroscopes, Nitride semiconductor, Photovoltaic cells, Van der Pauw

Abstract

Zirconium-doped indium oxide (In2O3:Zr) thin films of various Zr-contens were hetero-epitaxially grown on a sapphire single-crystalline substrate by a magnetron sputtering method. The films were heat-treated in an N2 atmosphere and the variations of their electrical properties as a function of the Zr-content were investigated. We observed the resistivity decreasing without any deterioration in their crystallinity and optical transmission property after the heat-treatment when the impurity content was within 2 wt.%, and then, the degree of the resistivity-decrease saturated since their mobility started to decrease due to the heavy impurity doping.

References

Maruska HP and Tietjen JJ. Appl Phys Lett 1969; 15: 327-329. http://dx.doi.org/10.1063/1.1652845

Pankove JI, Berkeyheiser JE and Miller EA. J Appl Phys, 1974; 45: 280-1286.

Lagerstedt O and Monemar B. J Appl Phys 1974; 45: 2266-2272. http://dx.doi.org/10.1063/1.1663574

Ohki Y, Toyoda Y, Kobayashi H and Akasaki I. Inst Phys Conf Ser 1981; 63: 479-484.

Yoshida S, Misawa S and Gonda S. Appl Phys Lett 1983; 42: 427-429. http://dx.doi.org/10.1063/1.93952

Amano H, Sawaki N, Akasaki I and Toyoda Y. Appl Phys Lett 1986; 48: 363. http://dx.doi.org/10.1063/1.96549

Nakamura S, Harada Y and Seno M. Appl. Phys Lett 1991; 58: 2012-2023. http://dx.doi.org/10.1063/1.105239

Sato Y and Ito K. Jpn J Appl Phys 2011; 50: 108004-1-2.

Ohta H, Orita M, Hirano M, Tanji H, Kawazoe H and Hosono H. Appl Phys Lett 2000; 76: 2740-2742. http://dx.doi.org/10.1063/1.126461

Koida T and Kondo M. J Appl Phys 2007; 101: 063713-1-6.

Muraki Y and Sato Y. IEICE Trans Electron C 2015; J98-C: 302-308.

Sato Y, Aoshima T and Muraki Y. Jpn J Appl Phys 2015; 54: 08KC09-1-5.

Downloads

Published

2016-06-15

Issue

Vol. 3 No. 1 (2016)

Section

Articles

License

Policy for Journals/Articles with Open Access

Authors who publish with this journal agree to the following terms:
    1. Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.

  1. Authors are permitted and encouraged to post links to their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work

Policy for Journals / Manuscript with Paid Access

Authors who publish with this journal agree to the following terms:
    1. Publisher retain copyright .

  1. Authors are permitted and encouraged to post links to their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work .