Chemical Etching and TEM Crystalline Quality Assessment of Single Crystalline ZnSe Ingots Grown by I2 Vapor Phase Transport

Authors

  • Raúl L. D´ Elía CINSO-UNIDEF, Juan Bautista de la Salle 4397, 1603, Villa Martelli, Buenos Aires, Argentina
  • Myriam H. Aguirre Dpto de Quím Inorg, Fac de Cs Quím, Univ Complutense, 28040, Madrid, Spain
  • Eduardo A. Heredia CINSO-UNIDEF, Juan Bautista de la Salle 4397, 1603, Villa Martelli, Buenos Aires, Argentina
  • María C. Di Stefano FRBA-UTN, Medrano 951, 1179, C.A.B.A., Argentina
  • Ana M. Martínez CINSO-UNIDEF, Juan Bautista de la Salle 4397, 1603, Villa Martelli, Buenos Aires, Argentina
  • Alfredo J. Tolley CNEA-CAB, San Carlos de Bariloche, 8402, Río Negro, Argentina
  • Javier L. M. Núñez García CINSO-UNIDEF, Juan Bautista de la Salle 4397, 1603, Villa Martelli, Buenos Aires, Argentina
  • Adriano Geraci CNEA-CAB, San Carlos de Bariloche, 8402, Río Negro, Argentina
  • Edgardo Cabanillas UNSAM/CNEA-CAC, Av. Gral Paz 1499, 1650, San Martín, Buenos Aires, Argentina
  • Horacio R. Cánepa CINSO-UNIDEF, Juan Bautista de la Salle 4397, 1603, Villa Martelli, Buenos Aires, Argentina
  • Alicia B. Trigubó CINSO-UNIDEF, Juan Bautista de la Salle 4397, 1603, Villa Martelli, Buenos Aires, Argentina

DOI:

https://doi.org/10.15379/2408-977X.2015.02.02.5

Keywords:

Single crystalline ZnSe, II-VI Semiconductors, (I2) Chemical transport, Chemical etching, Transmission and scanning electronic microscopy

Abstract

Crystalline defects were studied in single crystalline ZnSe grown by chemical transport using I2 as gaseous carrier. Transmission electronic microscopy determined an excellent structural order in the micrometric and nanometric range. Larger material areas were studied by chemical etching using different reagents to determine average dislocations density and average adjacent subgrains misorientation. Comparable micrographic results of different reagents are shown. Characterization values of ZnSe commercial substrate grown by High Pressure Bridgman (HPB) have been compared to those that correspond to our grown material wafers. Characterization proved that the semiconductor crystalline quality in our wafers is appropriate for optical devices.

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Published

2015-12-10

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Vol. 2 No. 2 (2015)

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