Numerical Simulation of HgCdTe Based Simultaneous MWIR/LWIR Photodetector for Free Space Optical Communication

Authors

  • A.D.D. Dwivedi Groupe Nanoélectronique, Laboratoire IMS, CNRS - UMR 5218 Université de Bordeaux, 351 Cours de la Liberation - 33405 Talence Cedex, France
  • A. Pranav Department of Electronics and Communication Engineering Graphic Era University, Dehradune, India
  • Gaurav Gupta Centre for Research in Microelectronics, Department of Electronics Engineering, IIT-BHU, Varanasi, India
  • P. Chakrabarti Motilal Nehru National Institute of Technology, Allahabad-211004, India

DOI:

https://doi.org/10.15379/2408-977X.2015.02.01.5

Keywords:

Photodetector, Numerical simulation, quantum efficiency, spectral response.

Abstract

In this paper we report a theoretically simulated multilayer Hg1-xCdxTe based heterojunction photodetector for dual band operation at temperature 78K. The detector is designed to operate at two strategic atmospheric windows in the MIR (3.8 µm) and in the LWIR (10.6 µm) region. The device has been modeled using closed form analytical formula and is also simulated using the device simulation software ATLAS from SILVACO® international. The device has been theoretically characterized in respect of energy band diagram, electric field profile, current voltage characteristics, spectral response and quantum efficiency. The detector is expected to find application in free space optical communication at 3.8 µm and at 10.6 µm

References

Rogalski A. “Infrared detectors: status and trend,” Progr. Quantum Electron 2003; 27: pp. 59-210. http://dx.doi.org/10.1016/S0079-6727(02)00024-1

Bellotti E, Orsogna DD.: Numerical analysis of HgCdTe simultaneous two-color photovoltaic infrared detectors. IEEE J. Quantum Electron 2006; 42: 418-426. http://dx.doi.org/10.1109/JQE.2006.871555

Reine M, Sood A, Tredwell T. “Photovoltaic infrered detector,” in Mercury Cadmium Telluride. ser. Semiconductors and Semimetals, RK. Willardson and AC. Beer, Eds. New York: Academic 1981; 18: pp. 201-311.

Norton P. “HgCdTe infrared detectors,” Opt.-Electron. Rev., 2002; 10 no. 3: pp. 159-174.

Reine M. “Review of HgCdTe photodiodes for IR detection,” in Proc. SPIE Infrared Detectors Focal Plane Arrays, vol. 4028, Orlando, FL Apr. 2000; pp. 320-330. http://dx.doi.org/10.1117/12.391745

Reine M. “HgCdTe photodiodes for IR detection: a review,” Proc. SPIE Photodetectors Mater Dev VI Jan 2001; 4288: pp. 266-277. http://dx.doi.org/10.1117/12.429413

Tidrow M, Dyer W. “Infrared sensors for ballistic missile defense,” Infrared Phys. Technol 2001; 42: pp. 333-336. http://dx.doi.org/10.1016/S1350-4495(01)00092-5

Reine M, Norton P, Star R, Weiler M, Kestigian M, Mitra P, et al. “Independently accessed back-to-back HgCdTe photodiodes: a new dual-band infrared detector,” J. Electron. Mater 1995; 24 no. 5: pp. 669-679. http://dx.doi.org/10.1007/BF02657977

Reine M, Hairston A, O’Dette P, Tobin S, Smith F, Musicant B, et al. “Simultaneous MW/LWdual-band MOVPE HgCdTe 64×64 FPAs,” in Proc. SPIE Infrared Detect. Focal Plane Arrays V Apr. 1998; 3379: Orlando, FL, pp. 200-212.

Rajavel R, Jamba D, Jensen J, Wu OK, Brewer P, Wilson J, et al. “Molecular beam epitaxial growth and performance of HgCdTe-Based Simultaneous- Mode two-color detectors,” J Electron Mater 1998; 10 no. 6: pp. 747-751. http://dx.doi.org/10.1007/s11664-998-0047-x

Rajavel R, Jamba D, Jensen J, Wu OK, Wilson J, Johnson J, et al. “Molecular beam epitaxial growth and performance of integrated multispectral HgCdTe photodiodes for the detection of Mid-wave infrared radiation,” J Cryst Growth 1998; 184: pp. 1272-1278. http://dx.doi.org/10.1016/S0022-0248(97)00811-7

Rajavel R, Jamba D, Wu OK, Jensen J, Wilson J, Patten E, et al. “High performance HgCdTe two-color infrared detector grown by molecular beam epitaxy,” J Cryst Growth 1997; 175: pp. 653-658. http://dx.doi.org/10.1016/S0022-0248(96)01200-6

Kosai K. “Status and applications of HgCdTe device modeling,” J Electron Mater 1995; vol. 24 no. 5: pp. 635-640. http://dx.doi.org/10.1007/BF02657972

Robinson H. “Process modeling of HgCdTe infrared photodetectors,” J Electron Mater 1998; 27 no. 6: pp. 589-594. http://dx.doi.org/10.1007/s11664-998-0020-8

Williams G, De Wames R. “Numerical simulation of HgCdTe detector characteristics,” J Electron Mater 1995; 24 no. 9: pp. 1239-1248. http://dx.doi.org/10.1007/BF02653080

Dhar V, Gopal V. “Infrared detector performance in an area array,” Opt Eng 2001; 40 no. 5: pp. 679-691. http://dx.doi.org/10.1117/1.1356706

“Optimum diode geometry in a two-dimensional photovoltaic array,” Opt Eng 2000; 39 no. 8: pp. 2022-2030. http://dx.doi.org/10.1117/1.1303763

Dhar V, Bhan R, Ashokan A. “Effect of built-in electric field on crosstalk in focal plane arrays using HgCdTe epilayers,” Infrared Phys Technol 1998; 39: pp. 353-367. http://dx.doi.org/10.1016/S1350-4495(98)00024-3

Wenus J, Rutkowski J, Rogalski A. “Two-Dimensional analysis of double layer heterojunction HgCdTe photodiodes,” IEEE Trans. Electron Dev Jul. 2001; 48 no. 7: pp. 1326-1332. http://dx.doi.org/10.1109/16.930647

Józ´wikowski K, Rogalski A. “Computer modeling of Dual-Band HgCdTe photovoltaic detectors,” J Appl Phys 2001; 90 no. 3: pp. 1286-1291. http://dx.doi.org/10.1063/1.1380989

Mitra P, Reine M. “MOVPE growth of HgCdTe for bandgap engineering of IR detectors arrays,” in Proc. SPIE Mater. Dev. IV, 3629, San Jose CA Jan 1999; pp. 64-73.

TCAD Atlas User’s Manual, SILVACO® international.

Rogalski A, Adamiec K, Rutokowski J. “Narrow-gap semiconductor photodiodes,” SPIE Press, Bellingham, Wasington, USA, 2000.

Capper P. Properties of Narrow Gap Cadmium-Based Compounds, EMIS data reviews series, No. 10, INSPEC, The institution of Electrical Engineers, London, 1995

Weiler MH. “Magnetooptical properties of Hg1-xCdxTe Alloyes,” in Semiconductors and Semimetals, edited by R.K. Willordson And A.C. Beer, Academic Press, New York, 1981; 16: pp 119-191.

Chu J, Mi Z, Tang D. “Band-to band absorption in narrow-gap Hg1-xCdxTe semiconductors,” J Appl Phys 1992; 71: pp. 3955-3961. http://dx.doi.org/10.1063/1.350867

Chu J, li B, Liu K, Tang D. “Empirical rule of intrinsic absorption spectroscopy in Hg1-xCdxTe,” J Appl Phys 1994; 75: pp.1234-1235. http://dx.doi.org/10.1063/1.356464

Bardeen J, Blatt FJ, Hall LH. “ Indirect transitions from the valence to the conduction bands,”in Photoconductivity Conference, Atlantic city 1954; pp.146-154, edited by Breackenridge R, Russel B, Hahn E. Wiley, New York (1956).

Shockley W, Read WT. “Statistics of recombination of holes and electrons,” Phys Rev 1952; 87: pp.835-842. http://dx.doi.org/10.1103/PhysRev.87.835

Pratt R, Hewett J, Jones PCC, Quelch M. “Minority carrier lifetime in n-type bridgman Hg Cd Te,” J Appl Phys 1983; 54 no. 9: pp. 5152-5157. http://dx.doi.org/10.1063/1.332739

Dwivedi ADD. “Analytical Modeling and Numerical Simulation of P+-Hg0.69 Cd0.31Te/n-Hg0.78Cd0.22Te/CdZnTe Heterojunction Photodetector for LWIR Free Space Optical Communication System,” Journal of Applied Physics 2011; 110: 043101. http://dx.doi.org/10.1063/1.3615967

Dwivedi ADD. “Analytical Modeling and ATLAS Simulation of p+-Hg0.78 Cd0.22Te/n-Hg0.78Cd0.22Te/CdZnTe Homojunction Photodetector for LWIR Free Space Optical Communication System,” Journal of Electron Devices 2011; 9: pp. 396-404.

Dwivedi ADD, Chakrabarti P. “Sensitivity Analysis of an Hg1-xCdxTe based Photoconductive Receiver for Long Wavelength Free space optical communication at 9.6 µm,” Journal of Electron Devices 2011; 9: pp. 390-395.

Dwivedi ADD, Mittal A, Agrawal A, Chakrabarti P. “Analytical Modeling and ATLAS Simulation of N+-InP/n0-In0.53Ga0.47As/p+In0.53Ga0.47As p-i-n Photodetector for Optical Fiber Communication,” Infrared Physics & Technology 2010; 53 no. 4: p. 236-245. http://dx.doi.org/10.1016/j.infrared.2010.03.003

Dwivedi ADD, Chakrabarti P. “Analytical Modeling and ATLAS Simulation of N+-Hg0.69 Cd0.31Te /n0- Hg0.78 Cd0.22Te/p+Hg0.78 Cd0.22Te p-i-n Photodetector for Long wavelength Free Space Optical Communication,” Optoelectronics and Advanced Materials-Rapid Communications (OAM-RC) 2010; 4 no 4: pp. 480-497.

Dwivedi ADD. Arun Kumar Singh, Rajiv Prakash and P. Chakrabarti, “A Proposed Organic Schottky Barrier Photodetector for application in the Visible Region,” Current Applied Physics 2010; 10: pp. 900-903. http://dx.doi.org/10.1016/j.cap.2009.10.019

Arun Kumar Singh, Dwivedi ADD, Chakrabarti P, Rajiv Prakash. “Electronic and Optical Properties of Electrochemically Polymerized Polycarbazole/Aluminum Schottky Diodes,” Journal of Applied Physics 2009; 105: 114506. http://dx.doi.org/10.1063/1.3139277

Dwivedi ADD, Chakrabarti P. “Sensitivity analysis of an HgCdTe based photovoltaic receiver for long- wavelength free space optical communication systems” Optoelectronics Letters 5, pp. 21-25. http://dx.doi.org/10.1007/s11801-009-8123-x

Dwivedi ADD, Chakrabarti P. “Modeling and Analysis of Photoconductive Detectors based on Hg1-xCdxTe for free Space Optical Communication.” Optical and Quantum Electronics 2009; 39: pp. 627-641. http://dx.doi.org/10.1007/s11082-007-9122-4

Hu WD, Chen XS, Ye ZH, Lin C, Yin F, Lu W." Numerical analysis of two-color HgCdTe infrared photovoltaic heterostructure detector" Opt Quant Electron 2009; 41: 699-704. http://dx.doi.org/10.1007/s11082-010-9381-3

Dwivedi ADD. " Numerical Simulation and Spice Modeling of Organic Thin Film Transistors (OTFTs)" International Journal of Advanced Applied Physics Research 2014; 1 no. 2: 1421. http://dx.doi.org/10.15379/2408-977X.2014.01.02.3

Dwivedi ADD, Chakrabarti P. “Modeling and ATLAS simulation of HgCdTe based MWIR photodetector for free space optical communication,” International Conference on Recent Advances in Microwave Theory and Applications (MICROWAVE-2008) 2008; pp.412 - 415. http://dx.doi.org/10.1109/AMTA.2008.4763197

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Published

2015-06-15

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